Part Details for FQB8N90CTM by onsemi
Overview of FQB8N90CTM by onsemi
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FQB8N90CTM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
87X3727
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Newark | Qfc 900V 1.9Ohm D2Pak/Reel Rohs Compliant: Yes |Onsemi FQB8N90CTM Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.1900 / $1.5900 | Buy Now |
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DISTI #
FQB8N90CTMCT-ND
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DigiKey | MOSFET N-CH 900V 6.3A D2PAK Min Qty: 1 Lead time: 99 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$2.8200 | Buy Now |
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DISTI #
FQB8N90CTM
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Avnet Americas | Trans MOSFET N-CH 900V 6.3A 3-Pin TO-263 T/R - Tape and Reel (Alt: FQB8N90CTM) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Container: Reel | 0 |
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RFQ | |
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DISTI #
512-FQB8N90CTM
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Mouser Electronics | MOSFET Power MOSFET, N-Channel, QFET, 900 V, 6.3 A, 1.9 ?, D2PAK RoHS: Compliant | 1 |
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$1.3300 / $2.8100 | Buy Now |
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Rochester Electronics | FQB8N90CTM - Power Field-Effect Transistor, 6.3A, 900V, 1.9ohm, N-Channel, MOSFET, TO-263AB RoHS: Compliant Status: Obsolete Min Qty: 1 | 710 |
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$1.2300 / $1.4500 | Buy Now |
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DISTI #
FQB8N90CTM
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Avnet Americas | Trans MOSFET N-CH 900V 6.3A 3-Pin TO-263 T/R - Tape and Reel (Alt: FQB8N90CTM) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Container: Reel | 0 |
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RFQ | |
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DISTI #
FQB8N90CTM
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TME | Transistor: N-MOSFET, unipolar, 900V, 3.8A, Idm: 25A, 171W, D2PAK Min Qty: 1 | 0 |
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$1.6400 / $2.4500 | RFQ |
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DISTI #
FQB8N90CTM
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Avnet Silica | Trans MOSFET N-CH 900V 6.3A 3-Pin TO-263 T/R (Alt: FQB8N90CTM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 53 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FQB8N90CTM
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EBV Elektronik | Trans MOSFET N-CH 900V 6.3A 3-Pin TO-263 T/R (Alt: FQB8N90CTM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 53 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for FQB8N90CTM
FQB8N90CTM CAD Models
FQB8N90CTM Part Data Attributes:
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FQB8N90CTM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQB8N90CTM
onsemi
Power MOSFET, N-Channel, QFET®, 900 V, 6.3 A, 1.9 Ω, D2PAK, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | D2PAK-3/2 | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 850 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 6.3 A | |
| Drain-source On Resistance-Max | 1.9 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 171 W | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |