Datasheets
FQB5N50CFTM by:
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
Rochester Electronics LLC
Not Found

Power Field-Effect Transistor, 5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

Part Details for FQB5N50CFTM by Fairchild Semiconductor Corporation

Results Overview of FQB5N50CFTM by Fairchild Semiconductor Corporation

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FQB5N50CFTM Information

FQB5N50CFTM by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FQB5N50CFTM

Part # Distributor Description Stock Price Buy
Rochester Electronics 5A, 500V, 1.55ohm, N-Channel Power MOSFET, TO-263AB RoHS: Compliant Status: Obsolete Min Qty: 1 58
  • 1 $0.6717
  • 25 $0.6583
  • 100 $0.6314
  • 500 $0.6045
  • 1,000 $0.5709
$0.5709 / $0.6717 Buy Now

Part Details for FQB5N50CFTM

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FQB5N50CFTM Part Data Attributes

FQB5N50CFTM Fairchild Semiconductor Corporation
Buy Now Datasheet
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FQB5N50CFTM Fairchild Semiconductor Corporation Power Field-Effect Transistor, 5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Package Description D2PAK-3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 300 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 1.55 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 96 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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