Datasheets
FQB47P06TM_AM002 by:

Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

Part Details for FQB47P06TM_AM002 by Fairchild Semiconductor Corporation

Overview of FQB47P06TM_AM002 by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FQB47P06TM_AM002

Part # Distributor Description Stock Price Buy
Bristol Electronics   65
RFQ
Chip1Cloud MOSFET P-CH 60V 47A D2PAK 10000
RFQ

Part Details for FQB47P06TM_AM002

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FQB47P06TM_AM002 Part Data Attributes:

FQB47P06TM_AM002 Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FQB47P06TM_AM002 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Package Description LEAD FREE, D2PAK-3
Pin Count 2
Manufacturer Package Code 2LD,TO263, SURFACE MOUNT
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 820 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 47 A
Drain-source On Resistance-Max 0.026 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 160 W
Pulsed Drain Current-Max (IDM) 188 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQB47P06TM_AM002

This table gives cross-reference parts and alternative options found for FQB47P06TM_AM002. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB47P06TM_AM002, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQB47P06TM_AM002 P-Channel QFET® MOSFET -60V, -47A, 26mΩ, TO-263 2L (D2PAK), 6400-TAPE REEL onsemi FQB47P06TM_AM002 vs FQB47P06TM_AM002
Part Number Description Manufacturer Compare
FQB47P06TM_AM002 P-Channel QFET® MOSFET -60V, -47A, 26mΩ, TO-263 2L (D2PAK), 6400-TAPE REEL onsemi FQB47P06TM_AM002 vs FQB47P06TM_AM002
NP50P06KDG 50A, 60V, 0.023ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZK, TO-263, 3 PIN Renesas Electronics Corporation FQB47P06TM_AM002 vs NP50P06KDG
NP50P06KDG-E1-AY Power MOSFETs for Automotive, MP-25ZK, /Embossed Tape Renesas Electronics Corporation FQB47P06TM_AM002 vs NP50P06KDG-E1-AY
NP50P06KDG-E2-AY Power MOSFETs for Automotive, MP-25ZK, /Embossed Tape Renesas Electronics Corporation FQB47P06TM_AM002 vs NP50P06KDG-E2-AY
UTT50P06G-TN3-R Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET Unisonic Technologies Co Ltd FQB47P06TM_AM002 vs UTT50P06G-TN3-R

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