Datasheets
FQB46N15TM by:

45.6A, 150V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3

Part Details for FQB46N15TM by Rochester Electronics LLC

Overview of FQB46N15TM by Rochester Electronics LLC

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Part Details for FQB46N15TM

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FQB46N15TM Part Data Attributes:

FQB46N15TM Rochester Electronics LLC
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FQB46N15TM Rochester Electronics LLC 45.6A, 150V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TO-263
Package Description D2PAK-3
Pin Count 3
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 650 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 45.6 A
Drain-source On Resistance-Max 0.042 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 182.4 A
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQB46N15TM

This table gives cross-reference parts and alternative options found for FQB46N15TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB46N15TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQB46N15TM Power Field-Effect Transistor, 45.6A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FQB46N15TM vs FQB46N15TM
FQB46N15 Power Field-Effect Transistor, 45.6A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FQB46N15TM vs FQB46N15
Part Number Description Manufacturer Compare
FQB46N15TM Power Field-Effect Transistor, 45.6A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FQB46N15TM vs FQB46N15TM
FQB46N15 Power Field-Effect Transistor, 45.6A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FQB46N15TM vs FQB46N15

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