Part Details for FQB46N15TM by Fairchild Semiconductor Corporation
Overview of FQB46N15TM by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQB46N15TM
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FQB46N15TM-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 197 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
570 In Stock |
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$1.5300 | Buy Now |
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Bristol Electronics | 443 |
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RFQ | ||
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Rochester Electronics | 45.6A, 150V, 0.042ohm, N-Channel Power MOSFET, TO-263AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 570 |
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$1.3200 / $1.5500 | Buy Now |
Part Details for FQB46N15TM
FQB46N15TM CAD Models
FQB46N15TM Part Data Attributes:
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FQB46N15TM
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FQB46N15TM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 45.6A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-263 | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 650 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 45.6 A | |
Drain-source On Resistance-Max | 0.042 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 182.4 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQB46N15TM
This table gives cross-reference parts and alternative options found for FQB46N15TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB46N15TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQB46N15TM | 45.6A, 150V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3 | Rochester Electronics LLC | FQB46N15TM vs FQB46N15TM |
FQB46N15 | Power Field-Effect Transistor, 45.6A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | FQB46N15TM vs FQB46N15 |