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100V P-Channel MOSFET -33.5A, 60mΩ, TO-263 2L (D2PAK), 800-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Manufacturer | Description | Datasheet |
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UPD78F0856MAA-FAA-G | Renesas Electronics Corporation | 8-bit Microcontrollers (Non Promotion), , / |
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
48AC1168
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Newark | Pmos D2Pak 100V 60 Mohm/Reel |Onsemi FQB34P10TM-F085 RoHS: Not Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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FQB34P10TM-F085
onsemi
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FQB34P10TM-F085
onsemi
100V P-Channel MOSFET -33.5A, 60mΩ, TO-263 2L (D2PAK), 800-REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Manufacturer Package Code | 418AJ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 2200 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 33.5 A | |
Drain-source On Resistance-Max | 0.06 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 155 W | |
Pulsed Drain Current-Max (IDM) | 134 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FQB34P10TM-F085. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB34P10TM-F085, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FQB34P10TM | 33.5A, 100V, 0.06ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, D2PAK-3 | Rochester Electronics LLC | FQB34P10TM-F085 vs FQB34P10TM |
FQB34P10 | Power Field-Effect Transistor, 33.5A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | onsemi | FQB34P10TM-F085 vs FQB34P10 |
FQB34P10 | Power Field-Effect Transistor, 33.5A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Fairchild Semiconductor Corporation | FQB34P10TM-F085 vs FQB34P10 |
FQB34P10TM | Power Field-Effect Transistor, 33.5A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 | Fairchild Semiconductor Corporation | FQB34P10TM-F085 vs FQB34P10TM |
FQB34P10TM_F085 | Power Field-Effect Transistor, 33.5A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Fairchild Semiconductor Corporation | FQB34P10TM-F085 vs FQB34P10TM_F085 |
FQB34P10TM | P-Channel QFET® MOSFET -100V, -33.5A, 60mΩ, 800-REEL | onsemi | FQB34P10TM-F085 vs FQB34P10TM |
FQB34P10TM_F085 | -100V, -33.5A, 60mΩ, D2PAK P-Channel QFET®, TO-263 2L (D2PAK), 6400-TAPE REEL | onsemi | FQB34P10TM-F085 vs FQB34P10TM_F085 |