Part Details for FQB34N20TM by Fairchild Semiconductor Corporation
Overview of FQB34N20TM by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQB34N20TM
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FQB34N20TM-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 111 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
800 In Stock |
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$2.7100 | Buy Now |
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Rochester Electronics | 31A, 200V, 0.075ohm, N-Channel Power MOSFET, TO-263AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 800 |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 4000 |
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RFQ |
Part Details for FQB34N20TM
FQB34N20TM CAD Models
FQB34N20TM Part Data Attributes
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FQB34N20TM
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FQB34N20TM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-263 | |
Package Description | D2PAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 640 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 31 A | |
Drain-source On Resistance-Max | 0.075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 124 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQB34N20TM
This table gives cross-reference parts and alternative options found for FQB34N20TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB34N20TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQB34N20TM_AM002 | Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3 | Fairchild Semiconductor Corporation | FQB34N20TM vs FQB34N20TM_AM002 |
FQB34N20 | Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | FQB34N20TM vs FQB34N20 |
FQB34N20TM-AM002 | Power MOSFET, N-Channel, QFET®, 200 V, 31 A, 75 mΩ, D2PAK, TO-263 2L (D2PAK), 800-REEL | onsemi | FQB34N20TM vs FQB34N20TM-AM002 |
FQB34N20TM_AM002 | N-Channel QFET® MOSFET 200V, 31A, 75mΩ, TO-263 2L (D2PAK), 6400-TAPE REEL | onsemi | FQB34N20TM vs FQB34N20TM_AM002 |