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Part Details for FQB33N10LTM by onsemi
Overview of FQB33N10LTM by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for FQB33N10LTM
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34C0403
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Newark | Transistor, mosfet, n-Channel,100V V(Br)Dss,33A I(D),to-263Ab Rohs Compliant: Yes |Onsemi FQB33N10LTM Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
FQB33N10LTMTR-ND
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DigiKey | MOSFET N-CH 100V 33A D2PAK Min Qty: 800 Lead time: 99 Weeks Container: Tape & Reel (TR) |
14400 In Stock |
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$0.7253 / $0.9349 | Buy Now |
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DISTI #
FQB33N10LTM
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TME | Transistor: N-MOSFET, unipolar, 100V, 23A, Idm: 132A, 127W, D2PAK Min Qty: 1 | 0 |
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$0.9700 / $1.4500 | RFQ |
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DISTI #
SMC-FQB33N10LTM
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Sensible Micro Corporation | OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days Date Code: 1508+ Container: Tape & Reel | 2084 |
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RFQ |
Part Details for FQB33N10LTM
FQB33N10LTM CAD Models
FQB33N10LTM Part Data Attributes:
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FQB33N10LTM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQB33N10LTM
onsemi
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 33 A, 52 mΩ, D2PAK, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | D2PAK-3 | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 430 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 127 W | |
| Pulsed Drain Current-Max (IDM) | 132 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |