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Transistors / Power Field-Effect Transistors / FQB30N06LTM
Datasheets
FQB30N06LTM by:
Fairchild Semiconductor Corporation
Fairchild Semiconductor Corporation
Hongxing Electrical Ltd
onsemi
Tokmas Semiconductor
Not Found

Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

Part Details for FQB30N06LTM by Fairchild Semiconductor Corporation

Results Overview of FQB30N06LTM by Fairchild Semiconductor Corporation

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

FQB30N06LTM Information

FQB30N06LTM by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FQB30N06LTM

Part # Distributor Description Stock Price Buy
ComSIT USA AVAILABLE EU 245
RFQ
Vyrian Transistors 609
RFQ

Part Details for FQB30N06LTM

FQB30N06LTM CAD Models

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FQB30N06LTM Part Data Attributes

Parametric Data
FQB30N06LTM Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FQB30N06LTM Fairchild Semiconductor Corporation Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Package Description D2PAK-3
Pin Count 2
Manufacturer Package Code 2LD,TO263, SURFACE MOUNT
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 350 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 32 A
Drain-source On Resistance-Max 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 79 W
Pulsed Drain Current-Max (IDM) 128 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQB30N06LTM

This table gives cross-reference parts and alternative options found for FQB30N06LTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB30N06LTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FQB30N06L Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 FQB30N06LTM vs FQB30N06L
FQB30N06LTM onsemi Check for Price Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 32 A, 35 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL FQB30N06LTM vs FQB30N06LTM
FQB30N06TM Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 FQB30N06LTM vs FQB30N06TM

FQB30N06LTM Related Parts

FQB30N06LTM Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FQB30N06LTM is -55°C to 150°C.

  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be between 10V and 30V.

  • To minimize parasitic inductance, it is recommended to use a compact PCB layout with short leads and a solid ground plane. The drain and source pins should be connected to the PCB with minimal lead length.

  • To protect the FQB30N06LTM from ESD, it is recommended to use ESD protection devices such as TVS diodes or ESD suppressors, and to handle the device with ESD-safe materials and tools.

  • The maximum current rating for the FQB30N06LTM is 30A.