Part Details for FQB12N60TM by Fairchild Semiconductor Corporation
Overview of FQB12N60TM by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Motor control systems
Price & Stock for FQB12N60TM
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FQB12N60TM-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 217 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
6990 In Stock |
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$1.3800 | Buy Now |
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Rochester Electronics | 10.5A, 600V, 0.7ohm, N-Channel Power MOSFET, TO-263AB ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 6990 |
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$1.1900 / $1.4000 | Buy Now |
Part Details for FQB12N60TM
FQB12N60TM CAD Models
FQB12N60TM Part Data Attributes:
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FQB12N60TM
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FQB12N60TM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-263 | |
| Package Description | D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 790 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 10.5 A | |
| Drain-source On Resistance-Max | 0.7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 180 W | |
| Pulsed Drain Current-Max (IDM) | 42 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQB12N60TM
This table gives cross-reference parts and alternative options found for FQB12N60TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB12N60TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQB12N60 | Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | FQB12N60TM vs FQB12N60 |
| FQB12N60TM | 10.5A, 600V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3 | Rochester Electronics LLC | FQB12N60TM vs FQB12N60TM |