Datasheets
FQA90N08 by:

Power Field-Effect Transistor, 90A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

Part Details for FQA90N08 by Fairchild Semiconductor Corporation

Overview of FQA90N08 by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FQA90N08

Part # Distributor Description Stock Price Buy
Chip1Cloud MOSFET N-CH 80V 90A TO-3P 65460
RFQ

Part Details for FQA90N08

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FQA90N08 Part Data Attributes

FQA90N08 Fairchild Semiconductor Corporation
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FQA90N08 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 90A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-3PN
Package Description TO-3P, 3 PIN
Pin Count 3
Manufacturer Package Code 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 1360 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 90 A
Drain-source On Resistance-Max 0.016 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 214 W
Pulsed Drain Current-Max (IDM) 360 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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