Part Details for FQA7N80C-F109 by onsemi
Overview of FQA7N80C-F109 by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for FQA7N80C-F109
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
2156-FQA7N80C-F109-488-ND
|
DigiKey | POWER MOSFET, N-CHANNEL, QFET, 8 Min Qty: 179 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
20890 In Stock |
|
$1.6800 | Buy Now |
|
Bristol Electronics | 291 |
|
RFQ | ||
|
Quest Components | 232 |
|
$2.1460 / $3.4800 | Buy Now | |
|
Rochester Electronics | FQA7N80 - Power MOSFET, N-Channel, QFET, 800V, 7A, TO-3P RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 20890 |
|
$1.4500 / $1.7100 | Buy Now |
Part Details for FQA7N80C-F109
FQA7N80C-F109 CAD Models
FQA7N80C-F109 Part Data Attributes:
|
FQA7N80C-F109
onsemi
Buy Now
Datasheet
|
Compare Parts:
FQA7N80C-F109
onsemi
Power MOSFET, N-Channel, QFET®, 800 V, 7 A, 1.9 Ω, TO-3P, TO-3PN 3L, 450-TUBE
|
Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-3PN 3L | |
Package Description | TO-3PN, 3 PIN | |
Manufacturer Package Code | 340BZ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 580 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 1.9 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 198 W | |
Pulsed Drain Current-Max (IDM) | 28 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |