Part Details for FQA6N90 by Fairchild Semiconductor Corporation
Overview of FQA6N90 by Fairchild Semiconductor Corporation
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for FQA6N90
FQA6N90 CAD Models
FQA6N90 Part Data Attributes
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FQA6N90
Fairchild Semiconductor Corporation
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FQA6N90
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 6.4A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-3P | |
| Package Description | TO-3P, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 715 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 6.4 A | |
| Drain-source On Resistance-Max | 1.9 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 198 W | |
| Pulsed Drain Current-Max (IDM) | 25.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQA6N90
This table gives cross-reference parts and alternative options found for FQA6N90. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQA6N90, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQA8N90C | 8A, 900V, 1.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | Rochester Electronics LLC | FQA6N90 vs FQA8N90C |
| FQA8N90C-F109 | Power MOSFET, N-Channel, QFET®, 900 V, 8.0 A, 1.9 Ω, TO-3P, TO-3PN 3L, 450-TUBE | onsemi | FQA6N90 vs FQA8N90C-F109 |
| FQA8N90C | Power Field-Effect Transistor, 8A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | FQA6N90 vs FQA8N90C |
| FQA6N90 | 6.4A, 900V, 1.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | Rochester Electronics LLC | FQA6N90 vs FQA6N90 |
| FQA8N90C_F109 | N-Channel QFET® MOSFET 900V, 8.0A, 1.9Ω, TO-3PN 3L, 3600-RAIL | onsemi | FQA6N90 vs FQA8N90C_F109 |