Part Details for FQA18N50V2 by Fairchild Semiconductor Corporation
Overview of FQA18N50V2 by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FQA18N50V2
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 20A, 500V, 0.265ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 380 |
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$2.6400 / $3.1100 | Buy Now |
Part Details for FQA18N50V2
FQA18N50V2 CAD Models
FQA18N50V2 Part Data Attributes
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FQA18N50V2
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FQA18N50V2
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 20A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-3P | |
| Package Description | TO-3P, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 330 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.265 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 277 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQA18N50V2
This table gives cross-reference parts and alternative options found for FQA18N50V2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQA18N50V2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFP460BPBF | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | FQA18N50V2 vs IRFP460BPBF |
| FDP20N50F | Power MOSFET, N-Channel, UniFETTM, FRFET®, 500 V, 20 A, 260 mΩ, TO-220, 1000-TUBE | onsemi | FQA18N50V2 vs FDP20N50F |
| IXFT21N50Q | Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268, TO-268, 3 PIN | IXYS Corporation | FQA18N50V2 vs IXFT21N50Q |
| STP20NM50FD | N-Channel 500V - 0.22Ohm - 20A - TO-220 FDmesh(TM) POWER MOSFET (with FAST DIODE) | STMicroelectronics | FQA18N50V2 vs STP20NM50FD |
| IXFH21N50Q | Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | IXYS Corporation | FQA18N50V2 vs IXFH21N50Q |
| APT5024BLLG | Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN | Microsemi Corporation | FQA18N50V2 vs APT5024BLLG |
| IXTH21N50 | Power Field-Effect Transistor | New Jersey Semiconductor Products Inc | FQA18N50V2 vs IXTH21N50 |
| SIHG460B-GE3 | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, | Vishay Intertechnologies | FQA18N50V2 vs SIHG460B-GE3 |
| IXTH21N50 | Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | FQA18N50V2 vs IXTH21N50 |
| RF4E20N50ST | Power Field-Effect Transistor, 20A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA | Fairchild Semiconductor Corporation | FQA18N50V2 vs RF4E20N50ST |