Part Details for FQA11N90C-F109 by onsemi
Overview of FQA11N90C-F109 by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FQA11N90C-F109
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
48AC1154
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Newark | Qfc 900V 1.1Ohm To3Pn/Tube |Onsemi FQA11N90C-F109 Min Qty: 450 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$2.2800 / $2.3500 | Buy Now |
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LCSC | 900V 11A 300W 1.110V5.5A 5V250uA 1PCSNChannel TO-3P MOSFETs ROHS | 79 |
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$13.6136 / $17.8074 | Buy Now |
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Sense Electronic Company Limited | TO-3P | 2700 |
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RFQ |
Part Details for FQA11N90C-F109
FQA11N90C-F109 CAD Models
FQA11N90C-F109 Part Data Attributes:
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FQA11N90C-F109
onsemi
Buy Now
Datasheet
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FQA11N90C-F109
onsemi
Power MOSFET, N-Channel, QFET®, 900 V, 11.0 A, 1.1 Ω, TO-3P, TO-3PN 3L, 450-TUBE
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-3PN 3L | |
Package Description | ROHS COMPLIANT, TO-3PN, 3 PIN | |
Manufacturer Package Code | 340BZ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 960 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 900 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 1.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 44 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |