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Power MOSFET, N-Channel, QFET®, 900V, 11.4A, 960mΩ, TO-3P, TO-3PN 3L, 450-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
R5F109AAKSP#V0G | Renesas Electronics Corporation | Microcontrollers with Low Consumption Current for Automotive Applications | |
R5F10968JSP#X0 | Renesas Electronics Corporation | Microcontrollers with Low Consumption Current for Automotive Applications | |
R5F1096AKSP#H0 | Renesas Electronics Corporation | Microcontrollers with Low Consumption Current for Automotive Applications |
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FQA11N90-F109-ND
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DigiKey | MOSFET N-CH 900V 11.4A TO3PN Lead time: 16 Weeks Container: Tube | Temporarily Out of Stock |
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Buy Now | |
DISTI #
FQA11N90-F109
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Avnet Americas | Trans MOSFET N-CH 900V 11.4A 3-Pin(3+Tab) TO-3P Rail - Rail/Tube (Alt: FQA11N90-F109) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Container: Tube | 0 |
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RFQ | |
DISTI #
512-FQA11N90_F109
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Mouser Electronics | MOSFETs 900V N-Channel QFET RoHS: Compliant | 0 |
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$3.1600 / $5.2400 | Order Now |
DISTI #
FQA11N90-F109
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Avnet Silica | Trans MOSFET N-CH 900V 11.4A 3-Pin(3+Tab) TO-3P Rail (Alt: FQA11N90-F109) RoHS: Compliant Min Qty: 900 Package Multiple: 30 Lead time: 17 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
FQA11N90-F109
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EBV Elektronik | Trans MOSFET N-CH 900V 11.4A 3-Pin(3+Tab) TO-3P Rail (Alt: FQA11N90-F109) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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FQA11N90-F109
onsemi
Buy Now
Datasheet
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Compare Parts:
FQA11N90-F109
onsemi
Power MOSFET, N-Channel, QFET®, 900V, 11.4A, 960mΩ, TO-3P, TO-3PN 3L, 450-TUBE
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-3PN 3L | |
Package Description | TO-3PN, 3 PIN | |
Manufacturer Package Code | 340BZ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 1000 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 900 V | |
Drain Current-Max (ID) | 11.4 A | |
Drain-source On Resistance-Max | 0.96 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 45.6 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FQA11N90-F109. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQA11N90-F109, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FQA11N90_F109 | N-Channel QFET® MOSFET 900V, 11.4A, 960mΩ, TO-3PN 3L, 3600-RAIL | onsemi | FQA11N90-F109 vs FQA11N90_F109 |