Part Details for FQA10N80C-F109 by onsemi
Overview of FQA10N80C-F109 by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQA10N80C-F109
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
48AC1152
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Newark | Transistor Mosfets Rohs Compliant: Yes |Onsemi FQA10N80C-F109 Min Qty: 120 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$2.5500 / $2.6900 | Buy Now |
DISTI #
31Y1501
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Newark | Mosfet, N-Ch, 800V, 10A, To-3Pn -3, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:10A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Msl:- Rohs Compliant: Yes |Onsemi FQA10N80C-F109 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now |
Part Details for FQA10N80C-F109
FQA10N80C-F109 CAD Models
FQA10N80C-F109 Part Data Attributes:
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FQA10N80C-F109
onsemi
Buy Now
Datasheet
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Compare Parts:
FQA10N80C-F109
onsemi
Power MOSFET, N-Channel, QFET®, 800 V, 10 A, 1.1 Ω, TO-3P, TO-3PN 3L, 450-TUBE
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-3PN 3L | |
Package Description | ROHS COMPLIANT, TO-3PN, 3 PIN | |
Manufacturer Package Code | 340BZ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 920 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 1.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 240 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQA10N80C-F109
This table gives cross-reference parts and alternative options found for FQA10N80C-F109. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQA10N80C-F109, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQA10N80C_F109 | N-Channel QFET® MOSFET 800V, 10A, 1.1Ω, 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED, 450/RAIL | Fairchild Semiconductor Corporation | FQA10N80C-F109 vs FQA10N80C_F109 |
FQA10N80C_F109 | N-Channel QFET® MOSFET 800V, 10A, 1.1Ω, TO-3PN 3L, 3600-RAIL | onsemi | FQA10N80C-F109 vs FQA10N80C_F109 |
FQA10N80C | Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | FQA10N80C-F109 vs FQA10N80C |