Part Details for FPD1000AS by Filtronic plc
Overview of FPD1000AS by Filtronic plc
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for FPD1000AS
FPD1000AS CAD Models
FPD1000AS Part Data Attributes:
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FPD1000AS
Filtronic plc
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Datasheet
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FPD1000AS
Filtronic plc
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, SURFACE MOUNT PACKAGE-4
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FILTRONIC SOLID STATE INC | |
Package Description | MICROWAVE, R-CQMW-F4 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 10 V | |
FET Technology | HIGH ELECTRON MOBILITY | |
Highest Frequency Band | L BAND | |
JESD-30 Code | R-CQMW-F4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | MICROWAVE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | QUAD | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |