Part Details for FP7G75US60 by Fairchild Semiconductor Corporation
Overview of FP7G75US60 by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FP7G75US60
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Rochester Electronics | Insulated Gate Bipolar Transistor ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 2882 |
|
$27.5500 / $32.4100 | Buy Now |
Part Details for FP7G75US60
FP7G75US60 CAD Models
FP7G75US60 Part Data Attributes
|
|
FP7G75US60
Fairchild Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
FP7G75US60
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, EPM7, MODULE-7
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | MODULE | |
| Package Description | EPM7, MODULE-7 | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 75 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 310 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 293 ns | |
| Turn-on Time-Nom (ton) | 49 ns | |
| VCEsat-Max | 2.8 V |