Datasheets
FP35R12W2T4PBPSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

Part Details for FP35R12W2T4PBPSA1 by Infineon Technologies AG

Overview of FP35R12W2T4PBPSA1 by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

Price & Stock for FP35R12W2T4PBPSA1

Part # Distributor Description Stock Price Buy
DISTI # 93AC7021
Newark Igbt Mod, Six N Channel, 1.2Kv, 35A, Transistor Polarity:Six N Channel, Dc Collector Current:35A, Collector Emitter Saturation Voltage Vce(On):1.85V, Power Dissipation Pd:-, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FP35R12W2T4PBPSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 9
  • 1 $71.1600
  • 5 $67.8300
  • 10 $64.4900
  • 36 $62.2600
  • 54 $60.0500
  • 108 $57.8200
$57.8200 / $71.1600 Buy Now
DISTI # 2156-FP35R12W2T4PBPSA1-448-ND
DigiKey FP35R12 - IGBT MODULE Min Qty: 5 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 43
In Stock
  • 5 $61.1700
$61.1700 Buy Now
DISTI # FP35R12W2T4PBPSA1-ND
DigiKey IGBT MOD 1200V 70A 20MW Min Qty: 1 Lead time: 14 Weeks Container: Tray 1
In Stock
  • 1 $69.0800
  • 18 $52.9378
$52.9378 / $69.0800 Buy Now
DISTI # FP35R12W2T4PBPSA1
Avnet Americas Transistor IGBT Module N-CH 1200V 54A ?20V Screw Tray - Trays (Alt: FP35R12W2T4PBPSA1) RoHS: Compliant Min Qty: 18 Package Multiple: 18 Lead time: 14 Weeks, 0 Days Container: Tray 0
RFQ
DISTI # 726-FP35R12W2T4PBPSA
Mouser Electronics IGBT Modules 1200 V, 35 A PIM IGBT module RoHS: Compliant 0
  • 1 $63.0000
  • 10 $62.8300
  • 18 $52.9300
$52.9300 / $63.0000 Order Now
Rochester Electronics FP35R12 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 43
  • 1 $58.8200
  • 25 $57.6400
  • 100 $55.2900
  • 500 $52.9400
  • 1,000 $50.0000
$50.0000 / $58.8200 Buy Now
DISTI # SP001585174
EBV Elektronik Transistor IGBT Module N-CH 1200V 54A �20V Screw Tray (Alt: SP001585174) RoHS: Compliant Min Qty: 18 Package Multiple: 18 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FP35R12W2T4PBPSA1

FP35R12W2T4PBPSA1 CAD Models

FP35R12W2T4PBPSA1 Part Data Attributes

FP35R12W2T4PBPSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
FP35R12W2T4PBPSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-XUFM-X23
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 54 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
JESD-30 Code R-XUFM-X23
Number of Elements 7
Number of Terminals 23
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 510 ns
Turn-on Time-Nom (ton) 43 ns

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