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Transistors / IGBTs / FP35R12W2T4PB11BPSA1
Datasheets
FP35R12W2T4PB11BPSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

Part Details for FP35R12W2T4PB11BPSA1 by Infineon Technologies AG

Results Overview of FP35R12W2T4PB11BPSA1 by Infineon Technologies AG

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FP35R12W2T4PB11BPSA1 Information

FP35R12W2T4PB11BPSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FP35R12W2T4PB11BPSA1

Part # Distributor Description Stock Price Buy
DISTI # 93AC7022
Newark Igbt Mod, Six N Channel, 1.2Kv, 35A, Transistor Polarity:Six N Channel, Dc Collector Current:35A, ... Collector Emitter Saturation Voltage Vceon:1.85V, Power Dissipation Pd Rohs Compliant: Yes |Infineon FP35R12W2T4PB11BPSA1 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 2
  • 1 $62.2600
  • 5 $59.4400
  • 10 $56.6100
  • 36 $47.9100
  • 54 $47.3100
  • 108 $46.7100
$46.7100 / $62.2600 Buy Now
DISTI # 2156-FP35R12W2T4PB11BPSA1-448-ND
DigiKey IGBT MOD 1200V 70A 20MW Min Qty: 1 Lead time: 12 Weeks Container: Bulk MARKETPLACE PRODUCT 18
In Stock
  • 6 $51.9000
$51.9000 Buy Now
DISTI # FP35R12W2T4PB11BPSA1-ND
DigiKey IGBT MOD 1200V 70A 20MW Min Qty: 1 Lead time: 12 Weeks Container: Tray 8
In Stock
  • 1 $60.3500
  • 18 $44.9122
$44.9122 / $60.3500 Buy Now
DISTI # FP35R12W2T4PB11BPSA1
Avnet Americas Transistor IGBT Module N-CH 1.2kV 35A ?20V Screw Tray - Trays (Alt: FP35R12W2T4PB11BPSA1) RoHS: Compliant Min Qty: 18 Package Multiple: 18 Lead time: 12 Weeks, 0 Days Container: Tray 0
  • 18 $49.9427
$49.9427 Buy Now
DISTI # 726-FP35R12W2T4PB11B
Mouser Electronics IGBT Modules 1200 V, 35 A PIM IGBT module RoHS: Compliant 21
  • 1 $59.8700
  • 10 $54.4300
  • 18 $45.3600
  • 54 $44.9100
$44.9100 / $59.8700 Buy Now
Rochester Electronics FP35R12 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 18
  • 1 $49.9000
  • 25 $48.9000
  • 100 $46.9100
  • 500 $44.9100
  • 1,000 $42.4200
$42.4200 / $49.9000 Buy Now
DISTI # FP35R12W2T4PB11BPSA1
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Tray 18
  • 1 $52.6000
  • 5 $50.1000
  • 10 $48.4000
  • 36 $48.3000
  • 72 $43.8000
$43.8000 / $52.6000 Buy Now
DISTI # SP001326042
EBV Elektronik Transistor IGBT Module NCH 12kV 35A 20V Screw Tray (Alt: SP001326042) RoHS: Compliant Min Qty: 18 Package Multiple: 18 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FP35R12W2T4PB11BPSA1

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FP35R12W2T4PB11BPSA1 Part Data Attributes

Parametric Data
FP35R12W2T4PB11BPSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
FP35R12W2T4PB11BPSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description MODULE-35
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 54 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
JESD-30 Code R-XUFM-X35
Number of Elements 7
Number of Terminals 35
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 510 ns
Turn-on Time-Nom (ton) 43 ns

FP35R12W2T4PB11BPSA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FP35R12W2T4PB11BPSA1 is -40°C to 150°C.

  • Proper thermal management can be achieved by ensuring good heat sink contact, using thermal interface materials, and maintaining a clean and dust-free environment.

  • The recommended gate resistor value for the FP35R12W2T4PB11BPSA1 is typically in the range of 10 ohms to 20 ohms, but may vary depending on the specific application and switching frequency.

  • Yes, the FP35R12W2T4PB11BPSA1 can be used in a parallel configuration, but it's essential to ensure that the modules are properly matched and that the gate drive and control circuits are designed to handle the increased current and voltage requirements.

  • The maximum allowable voltage transient for the FP35R12W2T4PB11BPSA1 is typically 1.5 times the maximum rated voltage, but it's essential to consult the datasheet and application notes for specific guidance.