Datasheets
FP35R12W2T4PB11BPSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

Part Details for FP35R12W2T4PB11BPSA1 by Infineon Technologies AG

Overview of FP35R12W2T4PB11BPSA1 by Infineon Technologies AG

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Price & Stock for FP35R12W2T4PB11BPSA1

Part # Distributor Description Stock Price Buy
DISTI # 93AC7022
Newark Igbt Mod, Six N Channel, 1.2Kv, 35A, Transistor Polarity:Six N Channel, Dc Collector Current:35A, Collector Emitter Saturation Voltage Vce(On):1.85V, Power Dissipation Pd:-, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FP35R12W2T4PB11BPSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 2
  • 1 $73.3200
  • 5 $72.7300
  • 10 $72.1300
  • 36 $64.1700
  • 54 $61.8800
  • 108 $59.5800
$59.5800 / $73.3200 Buy Now
DISTI # 2156-FP35R12W2T4PB11BPSA1-448-ND
DigiKey IGBT MOD 1200V 70A 20MW Min Qty: 1 Lead time: 16 Weeks Container: Bulk MARKETPLACE PRODUCT 18
In Stock
  • 5 $63.0300
$63.0300 Buy Now
DISTI # FP35R12W2T4PB11BPSA1-ND
DigiKey IGBT MOD 1200V 70A 20MW Min Qty: 1 Lead time: 16 Weeks Container: Tray 8
In Stock
  • 1 $70.8100
  • 18 $54.5500
$54.5500 / $70.8100 Buy Now
DISTI # 726-FP35R12W2T4PB11B
Mouser Electronics IGBT Modules 1200 V, 35 A PIM IGBT module RoHS: Compliant 19
  • 1 $64.6000
  • 10 $63.9000
  • 18 $55.6500
  • 54 $54.5500
$54.5500 / $64.6000 Buy Now
Future Electronics EasyPIM 2B Series 1200 V 35 A Chassis Mount Trench Field Stop IGBT Module RoHS: Compliant pbFree: Yes Min Qty: 18 Package Multiple: 18 Lead time: 16 Weeks Container: Tray 0
Tray
  • 18 $54.6500
  • 36 $54.3000
  • 54 $54.0900
  • 72 $53.9500
  • 90 $53.4900
$53.4900 / $54.6500 Buy Now
DISTI # 75724262
Verical Trans IGBT Module N-CH 1200V 35A 23-Pin EASY2B-2 Tray RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2344 Americas - 18
  • 1 $74.2500
  • 5 $70.1250
  • 10 $63.1250
  • 18 $62.5000
$62.5000 / $74.2500 Buy Now
Rochester Electronics FP35R12 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 18
  • 1 $60.6100
  • 25 $59.4000
  • 100 $56.9700
  • 500 $54.5500
  • 1,000 $51.5200
$51.5200 / $60.6100 Buy Now
DISTI # C1S322001041915
Chip1Stop IGBT Modules RoHS: Compliant Container: Tray 18
  • 1 $59.4000
  • 5 $56.1000
  • 10 $50.7000
$50.7000 / $59.4000 Buy Now
DISTI # SP001326042
EBV Elektronik Transistor IGBT Module N-CH 1.2kV 35A �20V Screw Tray (Alt: SP001326042) RoHS: Compliant Min Qty: 18 Package Multiple: 18 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FP35R12W2T4PB11BPSA1

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FP35R12W2T4PB11BPSA1 Part Data Attributes

FP35R12W2T4PB11BPSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
FP35R12W2T4PB11BPSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-XUFM-X35
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 54 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
JESD-30 Code R-XUFM-X35
Number of Elements 7
Number of Terminals 35
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 510 ns
Turn-on Time-Nom (ton) 43 ns

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