Part Details for FP35R12KT4B11BOSA1 by Infineon Technologies AG
Overview of FP35R12KT4B11BOSA1 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Price & Stock for FP35R12KT4B11BOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
34AC1527
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Newark | Igbt, Module, N-Ch, 1.2Kv, 35A, Transistor Polarity:N Channel, Dc Collector Current:35A, Collector Emitter Saturation Voltage Vce(On):1.85V, Power Dissipation Pd:210W, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FP35R12KT4B11BOSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$60.1400 / $69.3300 | Buy Now |
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DISTI #
2156-FP35R12KT4B11BOSA1-ND
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DigiKey | IGBT MOD 1200V 35A 210W Min Qty: 5 Lead time: 99 Weeks Container: Bulk MARKETPLACE PRODUCT | Limited Supply - Call |
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$74.5000 | Buy Now |
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DISTI #
FP35R12KT4B11BOSA1
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Avnet Americas | LOW POWER ECONO - Trays (Alt: FP35R12KT4B11BOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Container: Tray | 0 |
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RFQ | |
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Rochester Electronics | FP35R12 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 | 26 |
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$63.9300 / $75.2100 | Buy Now |
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DISTI #
FP35R12KT4B11BOSA1
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Avnet Americas | LOW POWER ECONO - Trays (Alt: FP35R12KT4B11BOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Container: Tray | 0 |
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RFQ |
Part Details for FP35R12KT4B11BOSA1
FP35R12KT4B11BOSA1 CAD Models
FP35R12KT4B11BOSA1 Part Data Attributes:
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FP35R12KT4B11BOSA1
Infineon Technologies AG
Buy Now
Datasheet
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FP35R12KT4B11BOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | MODULE-23 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | COMPLEX | |
| Gate-Emitter Thr Voltage-Max | 6.4 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X23 | |
| Number of Elements | 7 | |
| Number of Terminals | 23 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 210 W | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 620 ns | |
| Turn-on Time-Nom (ton) | 210 ns | |
| VCEsat-Max | 2.15 V |