Part Details for FP30R06W1E3_B11 by Infineon Technologies AG
Overview of FP30R06W1E3_B11 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FP30R06W1E3_B11
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-FP30R06W1E3_B11
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Mouser Electronics | IGBT Modules IGBT Module 30A 600V RoHS: Compliant | 64 |
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$28.5900 / $37.7100 | Buy Now |
Part Details for FP30R06W1E3_B11
FP30R06W1E3_B11 CAD Models
FP30R06W1E3_B11 Part Data Attributes
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FP30R06W1E3_B11
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
FP30R06W1E3_B11
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | MODULE | |
Package Description | MODULE-23 | |
Pin Count | 23 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 37 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | COMPLEX | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X23 | |
Number of Elements | 7 | |
Number of Terminals | 23 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 115 W | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 245 ns | |
Turn-on Time-Nom (ton) | 42 ns | |
VCEsat-Max | 2 V |
Alternate Parts for FP30R06W1E3_B11
This table gives cross-reference parts and alternative options found for FP30R06W1E3_B11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FP30R06W1E3_B11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FP30R06W1E3B11BOMA1 | Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23 | Infineon Technologies AG | FP30R06W1E3_B11 vs FP30R06W1E3B11BOMA1 |
FP30R06W1E3 | Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, MODULE-23 | Infineon Technologies AG | FP30R06W1E3_B11 vs FP30R06W1E3 |