Datasheets
FP25R12W2T4B11BOMA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

Part Details for FP25R12W2T4B11BOMA1 by Infineon Technologies AG

Overview of FP25R12W2T4B11BOMA1 by Infineon Technologies AG

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Price & Stock for FP25R12W2T4B11BOMA1

Part # Distributor Description Stock Price Buy
DISTI # 34AC1526
Newark Igbt, Module, N-Ch, 1.2Kv, 39A, Transistor Polarity:N Channel, Dc Collector Current:39A, Collector Emitter Saturation Voltage Vce(On):1.85V, Power Dissipation Pd:175W, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Rohs Compliant: Yes |Infineon FP25R12W2T4B11BOMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 41
  • 1 $61.1600
  • 5 $59.3100
  • 10 $57.4600
  • 30 $55.6000
  • 60 $53.7500
  • 105 $50.0400
$50.0400 / $61.1600 Buy Now
DISTI # FP25R12W2T4B11BOMA1-ND
DigiKey IGBT MOD 1200V 39A 175W Min Qty: 1 Lead time: 26 Weeks Container: Tray 39
In Stock
  • 1 $58.8100
  • 15 $53.4647
  • 30 $51.6823
  • 90 $48.1179
$48.1179 / $58.8100 Buy Now
DISTI # FP25R12W2T4B11BOMA
Avnet Americas Transistor IGBT Module N-CH 1.2kV 39A ±20V Screw Tray - Trays (Alt: FP25R12W2T4B11BOMA) RoHS: Compliant Min Qty: 15 Package Multiple: 15 Lead time: 26 Weeks, 0 Days Container: Tray 0
  • 15 $54.6995
$54.6995 Buy Now
Rochester Electronics FP25R12 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 10
  • 1 $51.4600
  • 25 $50.4400
  • 100 $48.3800
  • 500 $46.3200
  • 1,000 $43.7400
$43.7400 / $51.4600 Buy Now
Ameya Holding Limited   Min Qty: 15 8
  • 15 $64.2928
  • 30 $63.0072
  • 45 $61.7470
$61.7470 / $64.2928 Buy Now
DISTI # SP000413966
EBV Elektronik Transistor IGBT Module N-CH 1.2kV 39A �20V Screw Tray (Alt: SP000413966) RoHS: Compliant Min Qty: 15 Package Multiple: 15 Lead time: 27 Weeks, 0 Days EBV - 885
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 15 915
  • 15 $72.1900
  • 915 $67.1800
$67.1800 / $72.1900 Buy Now

Part Details for FP25R12W2T4B11BOMA1

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FP25R12W2T4B11BOMA1 Part Data Attributes:

FP25R12W2T4B11BOMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
FP25R12W2T4B11BOMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 39A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-XUFM-X23
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 39 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
JESD-30 Code R-XUFM-X23
Number of Elements 7
Number of Terminals 23
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 520 ns
Turn-on Time-Nom (ton) 47 ns

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