Part Details for FP25R12KT4B11BOSA1 by Infineon Technologies AG
Overview of FP25R12KT4B11BOSA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FP25R12KT4B11BOSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FP25R12KT4B11BOSA1-ND
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DigiKey | IGBT MOD 1200V 25A 160W Lead time: 52 Weeks Container: Bulk | Limited Supply - Call |
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Buy Now | |
DISTI #
FP25R12KT4B11BOSA1
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Avnet Americas | Transistor IGBT Module N-CH 1.2kV 25A ±20V Screw Tray - Trays (Alt: FP25R12KT4B11BOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Container: Tray | 0 |
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RFQ |
Part Details for FP25R12KT4B11BOSA1
FP25R12KT4B11BOSA1 CAD Models
FP25R12KT4B11BOSA1 Part Data Attributes
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FP25R12KT4B11BOSA1
Infineon Technologies AG
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Datasheet
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FP25R12KT4B11BOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | MODULE-23 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | COMPLEX | |
Gate-Emitter Thr Voltage-Max | 6.4 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X23 | |
Number of Elements | 7 | |
Number of Terminals | 23 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 160 W | |
Reference Standard | UL APPROVED | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 620 ns | |
Turn-on Time-Nom (ton) | 210 ns | |
VCEsat-Max | 2.15 V |