Datasheets
FP15R12YT3 by:

Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, MODULE-23

Part Details for FP15R12YT3 by Infineon Technologies AG

Overview of FP15R12YT3 by Infineon Technologies AG

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for FP15R12YT3

Part # Distributor Description Stock Price Buy
DISTI # 641-FP15R12YT3
Mouser Electronics IGBT Modules N-CH 1.2KV 25A RoHS: Compliant 34
  • 1 $87.0800
  • 10 $81.1000
  • 60 $76.5300
  • 100 $75.2800
$75.2800 / $87.0800 Buy Now

Part Details for FP15R12YT3

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FP15R12YT3 Part Data Attributes:

FP15R12YT3 Infineon Technologies AG
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FP15R12YT3 Infineon Technologies AG Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, MODULE-23
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X23
Pin Count 23
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 25 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X23
Number of Elements 7
Number of Terminals 23
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 590 ns
Turn-on Time-Nom (ton) 80 ns
VCEsat-Max 2.15 V

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