Datasheets
FP15R12W2T4 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor

Part Details for FP15R12W2T4 by Infineon Technologies AG

Overview of FP15R12W2T4 by Infineon Technologies AG

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for FP15R12W2T4

Part # Distributor Description Stock Price Buy
DISTI # 641-FP15R12W2T4
Mouser Electronics IGBT Modules IGBT Module RoHS: Compliant 12
  • 1 $44.7600
  • 10 $42.2000
  • 30 $35.1700
$35.1700 / $44.7600 Buy Now

Part Details for FP15R12W2T4

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FP15R12W2T4 Part Data Attributes

FP15R12W2T4 Infineon Technologies AG
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FP15R12W2T4 Infineon Technologies AG Insulated Gate Bipolar Transistor
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 30 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-Emitter Thr Voltage-Max 6.4 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X34
Number of Elements 7
Number of Terminals 34
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 145 W
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 540 ns
Turn-on Time-Nom (ton) 52 ns
VCEsat-Max 2.25 V

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