Datasheets
FP15R12W1T4PB11BPSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-23

Part Details for FP15R12W1T4PB11BPSA1 by Infineon Technologies AG

Overview of FP15R12W1T4PB11BPSA1 by Infineon Technologies AG

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for FP15R12W1T4PB11BPSA1

Part # Distributor Description Stock Price Buy
DISTI # 93AC7015
Newark Igbt Mod, Seven Npn, 1.2Kv, 15A, Dc Collector Current:15A, Collector Emitter Saturation Voltage Vce(On):1.85V, Power Dissipation Pd:-, Collector Emitter Voltage V(Br)Ceo:1.2Kv, Transistor Case Style:Module, No. Of Pins:23Pins, Rohs Compliant: Yes |Infineon FP15R12W1T4PB11BPSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $36.2500
$36.2500 Buy Now
DISTI # 2156-FP15R12W1T4PB11BPSA1-448-ND
DigiKey 1200 V, 15 A PIM IGBT MODULE Min Qty: 8 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 22
In Stock
  • 8 $40.2900
$40.2900 Buy Now
DISTI # FP15R12W1T4PB11BPSA1-ND
DigiKey IGBT MOD 1200V 30A 20MW Min Qty: 30 Lead time: 14 Weeks Container: Tray Temporarily Out of Stock
  • 30 $34.8627
$34.8627 Buy Now
DISTI # FP15R12W1T4PB11BPS
Avnet Americas Transistor IGBT Module N-CH 1.2kV 15A ?20V Screw Tray - Trays (Alt: FP15R12W1T4PB11BPS) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 14 Weeks, 0 Days Container: Tray 0
RFQ
DISTI # 726-FP15R12W1T4PB11B
Mouser Electronics IGBT Modules 1200 V, 15 A PIM IGBT module RoHS: Compliant 15
  • 1 $50.4100
  • 10 $44.9200
  • 30 $42.2500
  • 60 $40.8400
  • 120 $39.4300
$39.4300 / $50.4100 Buy Now
Rochester Electronics 1200 V, 15 A PIM IGBT module ' RoHS: Compliant Status: Active Min Qty: 1 22
  • 1 $40.6700
  • 25 $39.8600
  • 100 $38.2300
  • 500 $36.6100
  • 1,000 $34.5700
$34.5700 / $40.6700 Buy Now
DISTI # SP001326030
EBV Elektronik Transistor IGBT Module N-CH 1.2kV 15A �20V Screw Tray (Alt: SP001326030) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FP15R12W1T4PB11BPSA1

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FP15R12W1T4PB11BPSA1 Part Data Attributes

FP15R12W1T4PB11BPSA1 Infineon Technologies AG
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FP15R12W1T4PB11BPSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-23
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description MODULE-23
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-Emitter Thr Voltage-Max 6.4 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X23
Number of Elements 7
Number of Terminals 23
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 510 ns
Turn-on Time-Nom (ton) 130 ns
VCEsat-Max 2.25 V

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