Datasheets
FP15R12W1T4B3BOMA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-20

Part Details for FP15R12W1T4B3BOMA1 by Infineon Technologies AG

Overview of FP15R12W1T4B3BOMA1 by Infineon Technologies AG

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for FP15R12W1T4B3BOMA1

Part # Distributor Description Stock Price Buy
DISTI # 34AH0729
Newark Igbt Mod, 1.2Kv, 15A, 130W, Continuous Collector Current:15A, Collector Emitter Saturation Voltage:1.85V, Power Dissipation:130W, Operating Temperature Max:175°C, Igbt Termination:Press Fit, Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Infineon FP15R12W1T4B3BOMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 63
  • 1 $45.1700
  • 5 $43.5200
  • 10 $41.8800
  • 48 $40.2500
  • 72 $37.8500
  • 120 $35.3200
  • 264 $34.0600
$34.0600 / $45.1700 Buy Now
DISTI # FP15R12W1T4B3BOMA1-ND
DigiKey IGBT MOD 1200V 28A 130W Min Qty: 1 Lead time: 20 Weeks Container: Tray 47
In Stock
  • 1 $43.4300
  • 24 $38.6950
  • 48 $36.3902
  • 96 $33.9643
  • 240 $32.7512
$32.7512 / $43.4300 Buy Now
DISTI # FP15R12W1T4B3BOMA1
Avnet Americas LOW POWER EASY - Trays (Alt: FP15R12W1T4B3BOMA1) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 20 Weeks, 0 Days Container: Tray 0
  • 24 $37.2310
$37.2310 Buy Now
DISTI # 75723283
Verical Trans IGBT Module N-CH 1200V 28A 130W 20-Pin EASY1B-1 Tray Min Qty: 1 Package Multiple: 1 Date Code: 2348 Americas - 24
  • 1 $47.5000
  • 5 $42.8750
  • 10 $40.6250
$40.6250 / $47.5000 Buy Now
Rochester Electronics LOW POWER EASY RoHS: Compliant Status: Active Min Qty: 1 199
  • 1 $35.0300
  • 25 $34.3300
  • 100 $32.9300
  • 500 $31.5300
  • 1,000 $29.7700
$29.7700 / $35.0300 Buy Now
Ameya Holding Limited   39
RFQ
DISTI # C1S322001058678
Chip1Stop IGBT Modules RoHS: Compliant Container: Tray 24
  • 1 $38.0000
  • 5 $34.3000
  • 10 $32.5000
$32.5000 / $38.0000 Buy Now

Part Details for FP15R12W1T4B3BOMA1

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FP15R12W1T4B3BOMA1 Part Data Attributes

FP15R12W1T4B3BOMA1 Infineon Technologies AG
Buy Now Datasheet
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FP15R12W1T4B3BOMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-20
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-XUFM-X20
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 28 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X20
Number of Elements 6
Number of Terminals 20
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard UL APPROVED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 495 ns
Turn-on Time-Nom (ton) 120 ns

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