Datasheets
FP15R12W1T4B11BOMA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-23

Part Details for FP15R12W1T4B11BOMA1 by Infineon Technologies AG

Overview of FP15R12W1T4B11BOMA1 by Infineon Technologies AG

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for FP15R12W1T4B11BOMA1

Part # Distributor Description Stock Price Buy
DISTI # 34AC1524
Newark Igbt Mod, 1.2Kv, 28A, 130W, Continuous Collector Current:28A, Collector Emitter Saturation Voltage:1.85V, Power Dissipation:130W, Operating Temperature Max:150°C, Igbt Termination:Press Fit, Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Infineon FP15R12W1T4B11BOMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 37
  • 1 $52.4700
  • 5 $50.6200
  • 10 $48.7600
  • 48 $46.9000
  • 72 $45.7600
  • 120 $44.6100
$44.6100 / $52.4700 Buy Now
DISTI # 448-FP15R12W1T4B11BOMA1-ND
DigiKey IGBT MOD 1200V 28A 130W Min Qty: 1 Lead time: 14 Weeks Container: Tray 12
In Stock
  • 1 $43.9800
  • 24 $30.4375
$30.4375 / $43.9800 Buy Now
DISTI # FP15R12W1T4B11BOMA
Avnet Americas Transistor IGBT Module N-CH 1200V 28A ?20V Screw Tray - Trays (Alt: FP15R12W1T4B11BOMA) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 14 Weeks, 0 Days Container: Tray 0
RFQ
DISTI # 75724366
Verical Trans IGBT Module N-CH 1200V 28A 130W 23-Pin EASY1B-2 Tray Min Qty: 1 Package Multiple: 1 Date Code: 2341 Americas - 14
  • 1 $39.6250
  • 5 $38.5000
$38.5000 / $39.6250 Buy Now
Rochester Electronics FP15R12W1T4_B11 - Low Power Easy RoHS: Compliant Status: Active Min Qty: 1 21
RFQ
DISTI # C1S322001058669
Chip1Stop IGBT Modules RoHS: Compliant Container: Tray 14
  • 1 $32.6000
  • 5 $31.9000
$31.9000 / $32.6000 Buy Now
DISTI # SP000707712
EBV Elektronik Transistor IGBT Module N-CH 1200V 28A �20V Screw Tray (Alt: SP000707712) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FP15R12W1T4B11BOMA1

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FP15R12W1T4B11BOMA1 Part Data Attributes

FP15R12W1T4B11BOMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
FP15R12W1T4B11BOMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-23
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-XUFM-X23
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 28 A
Collector-Emitter Voltage-Max 1200 V
Configuration COMPLEX
JESD-30 Code R-XUFM-X23
Number of Elements 7
Number of Terminals 23
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 495 ns
Turn-on Time-Nom (ton) 120 ns

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