Part Details for FP10R12W1T4_B3 by Infineon Technologies AG
Overview of FP10R12W1T4_B3 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for FP10R12W1T4_B3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-FP10R12W1T4_B3
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Mouser Electronics | IGBT Modules IGBT 1200V 10A RoHS: Compliant | 7 |
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$27.2800 / $34.9700 | Buy Now |
Part Details for FP10R12W1T4_B3
FP10R12W1T4_B3 CAD Models
FP10R12W1T4_B3 Part Data Attributes
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FP10R12W1T4_B3
Infineon Technologies AG
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Datasheet
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FP10R12W1T4_B3
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-21
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | MODULE-21 | |
| Pin Count | 21 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 20 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X21 | |
| Number of Elements | 6 | |
| Number of Terminals | 21 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 105 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 500 ns | |
| Turn-on Time-Nom (ton) | 108 ns | |
| VCEsat-Max | 2.25 V |