Datasheets
FP10R06W1E3B11BOMA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-23

Part Details for FP10R06W1E3B11BOMA1 by Infineon Technologies AG

Overview of FP10R06W1E3B11BOMA1 by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Renewable Energy Automotive

Price & Stock for FP10R06W1E3B11BOMA1

Part # Distributor Description Stock Price Buy
DISTI # 448-FP10R06W1E3B11BOMA1-ND
DigiKey IGBT MODULE 600V 16A 68W Min Qty: 1 Lead time: 26 Weeks Container: Tray 26
In Stock
  • 1 $37.0100
  • 24 $32.9763
  • 48 $31.0121
  • 96 $28.9446
  • 240 $27.9108
$27.9108 / $37.0100 Buy Now
DISTI # SP000790734
EBV Elektronik (Alt: SP000790734) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FP10R06W1E3B11BOMA1

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FP10R06W1E3B11BOMA1 Part Data Attributes:

FP10R06W1E3B11BOMA1 Infineon Technologies AG
Buy Now Datasheet
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FP10R06W1E3B11BOMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-23
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-XUFM-X23
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Case Connection ISOLATED
Collector Current-Max (IC) 16 A
Collector-Emitter Voltage-Max 600 V
Configuration COMPLEX
JESD-30 Code R-XUFM-X23
Number of Elements 7
Number of Terminals 23
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 260 ns
Turn-on Time-Nom (ton) 26 ns

Alternate Parts for FP10R06W1E3B11BOMA1

This table gives cross-reference parts and alternative options found for FP10R06W1E3B11BOMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FP10R06W1E3B11BOMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FP10R06W1E3 Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP10R06W1E3B11BOMA1 vs FP10R06W1E3
FP10R06W1E3_B11 Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP10R06W1E3B11BOMA1 vs FP10R06W1E3_B11
Part Number Description Manufacturer Compare
FP10R06YE3BOMA1 Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Eupec Gmbh & Co Kg FP10R06W1E3B11BOMA1 vs FP10R06YE3BOMA1
FP10R06W1E3_B11 Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP10R06W1E3B11BOMA1 vs FP10R06W1E3_B11
FP20R06W1E3BOMA1 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP10R06W1E3B11BOMA1 vs FP20R06W1E3BOMA1
FP10R06YE3 Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP10R06W1E3B11BOMA1 vs FP10R06YE3
FP20R06W1E3B11BOMA1 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP10R06W1E3B11BOMA1 vs FP20R06W1E3B11BOMA1
FP20R06YE3BOMA1 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Eupec Gmbh & Co Kg FP10R06W1E3B11BOMA1 vs FP20R06YE3BOMA1
FB10R06W1E3 Insulated Gate Bipolar Transistor, 18A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP10R06W1E3B11BOMA1 vs FB10R06W1E3
FP20R06W1E3 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP10R06W1E3B11BOMA1 vs FP20R06W1E3
FB10R06W1E3BOMA1 Insulated Gate Bipolar Transistor, 18A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP10R06W1E3B11BOMA1 vs FB10R06W1E3BOMA1
FP10R06W1E3BOMA1 Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Infineon Technologies AG FP10R06W1E3B11BOMA1 vs FP10R06W1E3BOMA1

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