Part Details for FMS6G20US60 by Fairchild Semiconductor Corporation
Overview of FMS6G20US60 by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FMS6G20US60
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Rochester Electronics | FMS6G20US60 - Insulated Gate Bipolar Transistor, 20A, 600V, N-Channel ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 4 |
|
$15.8600 / $18.6600 | Buy Now |
Part Details for FMS6G20US60
FMS6G20US60 CAD Models
FMS6G20US60 Part Data Attributes:
|
FMS6G20US60
Fairchild Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
FMS6G20US60
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, 25PM-AA, 25 PIN
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Package Description | 25PM-AA, 25 PIN | |
Pin Count | 25 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 20 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-P25 | |
JESD-609 Code | e3 | |
Number of Elements | 6 | |
Number of Terminals | 25 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 89 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | PIN/PEG | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 320 ns | |
Turn-on Time-Nom (ton) | 170 ns | |
VCEsat-Max | 2.7 V |