Part Details for FMI49N20T2 by Fuji Electric Co Ltd
Overview of FMI49N20T2 by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for FMI49N20T2
FMI49N20T2 CAD Models
FMI49N20T2 Part Data Attributes
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FMI49N20T2
Fuji Electric Co Ltd
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Datasheet
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FMI49N20T2
Fuji Electric Co Ltd
Power Field-Effect Transistor, 49A I(D), 200V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 582.5 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 49 A | |
| Drain-source On Resistance-Max | 0.047 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 196 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FMI49N20T2
This table gives cross-reference parts and alternative options found for FMI49N20T2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FMI49N20T2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SHDC2251F | Power Field-Effect Transistor, 50A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Sensitron Semiconductors | FMI49N20T2 vs SHDC2251F |
| SFF50N20B | Power Field-Effect Transistor, 50A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, MILPACK-3 | Solid State Devices Inc (SSDI) | FMI49N20T2 vs SFF50N20B |
| SHD2251FS | Power Field-Effect Transistor, 50A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Sensitron Semiconductors | FMI49N20T2 vs SHD2251FS |
| SHD2251F | Power Field-Effect Transistor, 50A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Sensitron Semiconductors | FMI49N20T2 vs SHD2251F |
| SHDC2251FS | Power Field-Effect Transistor, 50A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Sensitron Semiconductors | FMI49N20T2 vs SHDC2251FS |
| SHD2081F | Power Field-Effect Transistor, 50A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Sensitron Semiconductors | FMI49N20T2 vs SHD2081F |
| SFF50N20N | Power Field-Effect Transistor, 50A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, TO-258, 3 PIN | Solid State Devices Inc (SSDI) | FMI49N20T2 vs SFF50N20N |
| SFF50N20P | Power Field-Effect Transistor, 50A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259, | Solid State Devices Inc (SSDI) | FMI49N20T2 vs SFF50N20P |
| SHD208603 | Power Field-Effect Transistor, 50A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254Z, 3 PIN | Sensitron Semiconductors | FMI49N20T2 vs SHD208603 |
| SHD2081FS | Power Field-Effect Transistor, 50A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254Z, 3 PIN | Sensitron Semiconductors | FMI49N20T2 vs SHD2081FS |