Datasheets
FLU17ZM by:

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, SMT, 4 PIN

Part Details for FLU17ZM by SUMITOMO ELECTRIC Device Innovations Inc

Overview of FLU17ZM by SUMITOMO ELECTRIC Device Innovations Inc

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Applications Consumer Electronics Healthcare

Part Details for FLU17ZM

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FLU17ZM Part Data Attributes

FLU17ZM SUMITOMO ELECTRIC Device Innovations Inc
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FLU17ZM SUMITOMO ELECTRIC Device Innovations Inc RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, SMT, 4 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer EUDYNA DEVICES INC
Package Description FLATPACK, R-PQFP-F4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Configuration SINGLE
DS Breakdown Voltage-Min 10 V
FET Technology JUNCTION
Highest Frequency Band L BAND
JESD-30 Code R-PQFP-F4
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLATPACK
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position QUAD
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material GALLIUM ARSENIDE

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