Datasheets
FLM6472-8F by:

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN

Part Details for FLM6472-8F by SUMITOMO ELECTRIC Device Innovations Inc

Overview of FLM6472-8F by SUMITOMO ELECTRIC Device Innovations Inc

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Part Details for FLM6472-8F

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FLM6472-8F Part Data Attributes

FLM6472-8F SUMITOMO ELECTRIC Device Innovations Inc
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FLM6472-8F SUMITOMO ELECTRIC Device Innovations Inc RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer EUDYNA DEVICES INC
Package Description FLANGE MOUNT, R-CDFM-F2
Pin Count 2
Manufacturer Package Code CASE IB
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 15 V
Drain Current-Max (ID) 2.6 A
FET Technology JUNCTION
Highest Frequency Band C BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

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