Part Details for FLM4450-45F by SUMITOMO ELECTRIC Device Innovations Inc
Overview of FLM4450-45F by SUMITOMO ELECTRIC Device Innovations Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
2SC4553-AZ | Renesas Electronics Corporation | Bipolar Power Transistors, MP-45F, / | |
2SA1741(0)-AZ | Renesas Electronics Corporation | Bipolar Power Transistors, MP-45F, / | |
2SC4552(0)-AZ | Renesas Electronics Corporation | Bipolar Power Transistors, MP-45F, / |
Part Details for FLM4450-45F
FLM4450-45F CAD Models
FLM4450-45F Part Data Attributes
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FLM4450-45F
SUMITOMO ELECTRIC Device Innovations Inc
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FLM4450-45F
SUMITOMO ELECTRIC Device Innovations Inc
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IK, 2 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | EUDYNA DEVICES INC | |
Package Description | FLANGE MOUNT, R-CDFM-F2 | |
Pin Count | 2 | |
Manufacturer Package Code | CASE IK | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 12 V | |
Drain Current-Max (ID) | 10 A | |
FET Technology | JUNCTION | |
Highest Frequency Band | C BAND | |
JESD-30 Code | R-CDFM-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |