Datasheets
FLM4450-45F by:

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IK, 2 PIN

Part Details for FLM4450-45F by SUMITOMO ELECTRIC Device Innovations Inc

Overview of FLM4450-45F by SUMITOMO ELECTRIC Device Innovations Inc

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Available Datasheets

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2SA1741(0)-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-45F, /
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Part Details for FLM4450-45F

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FLM4450-45F Part Data Attributes

FLM4450-45F SUMITOMO ELECTRIC Device Innovations Inc
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FLM4450-45F SUMITOMO ELECTRIC Device Innovations Inc RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IK, 2 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer EUDYNA DEVICES INC
Package Description FLANGE MOUNT, R-CDFM-F2
Pin Count 2
Manufacturer Package Code CASE IK
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 10 A
FET Technology JUNCTION
Highest Frequency Band C BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

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