Part Details for FLM1314-12F by SUMITOMO ELECTRIC Device Innovations Inc
Overview of FLM1314-12F by SUMITOMO ELECTRIC Device Innovations Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Healthcare
Medical Imaging
Part Details for FLM1314-12F
FLM1314-12F CAD Models
FLM1314-12F Part Data Attributes
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FLM1314-12F
SUMITOMO ELECTRIC Device Innovations Inc
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Datasheet
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FLM1314-12F
SUMITOMO ELECTRIC Device Innovations Inc
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | EUDYNA DEVICES INC | |
| Package Description | FLANGE MOUNT, R-CDFM-F2 | |
| Pin Count | 2 | |
| Manufacturer Package Code | CASE IB | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 15 V | |
| Drain Current-Max (ID) | 5 A | |
| FET Technology | JUNCTION | |
| Highest Frequency Band | KU BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | DEPLETION MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for FLM1314-12F
This table gives cross-reference parts and alternative options found for FLM1314-12F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FLM1314-12F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FLM1314-12F | KU BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN | FUJITSU Semiconductor Limited | FLM1314-12F vs FLM1314-12F |
| FLM1314-12F | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | SUMITOMO ELECTRIC Industries Ltd | FLM1314-12F vs FLM1314-12F |
| FLM1314-12F | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN | FUJITSU Limited | FLM1314-12F vs FLM1314-12F |