Part Details for FLM0910-8C by FUJITSU Limited
Overview of FLM0910-8C by FUJITSU Limited
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Environmental Monitoring
Industrial Automation
Part Details for FLM0910-8C
FLM0910-8C CAD Models
FLM0910-8C Part Data Attributes
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FLM0910-8C
FUJITSU Limited
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Datasheet
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FLM0910-8C
FUJITSU Limited
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJITSU LTD | |
| Package Description | HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | |
| Pin Count | 2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 15 V | |
| Drain Current-Max (ID) | 2.6 A | |
| FET Technology | JUNCTION | |
| Highest Frequency Band | X BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 42.8 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for FLM0910-8C
This table gives cross-reference parts and alternative options found for FLM0910-8C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FLM0910-8C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FLM0910-8F | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | SUMITOMO ELECTRIC Industries Ltd | FLM0910-8C vs FLM0910-8F |
| FLM0910-4C | RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Limited | FLM0910-8C vs FLM0910-4C |
| FLM0910-2 | X BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Semiconductor Limited | FLM0910-8C vs FLM0910-2 |
| FLM0910-8C | X BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Semiconductor Limited | FLM0910-8C vs FLM0910-8C |
| FLM0910-8F | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN | FUJITSU Limited | FLM0910-8C vs FLM0910-8F |
| FLM0910-8F | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | SUMITOMO ELECTRIC Device Innovations Inc | FLM0910-8C vs FLM0910-8F |
| FLM0910-8F | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | FUJITSU Semiconductor Limited | FLM0910-8C vs FLM0910-8F |
| FLM0910-3F | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 2 PIN | SUMITOMO ELECTRIC Device Innovations Inc | FLM0910-8C vs FLM0910-3F |
| FLM0910-12F | RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IB, 2 PIN | SUMITOMO ELECTRIC Industries Ltd | FLM0910-8C vs FLM0910-12F |
| FLM0910-3F | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 4 PIN | FUJITSU Limited | FLM0910-8C vs FLM0910-3F |