Datasheets
FLL21E180IU by:

RF Power Field-Effect Transistor, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, IU, 4 PIN

Part Details for FLL21E180IU by FUJITSU Limited

Overview of FLL21E180IU by FUJITSU Limited

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Applications Consumer Electronics Environmental Monitoring Industrial Automation Energy and Power Systems Renewable Energy

Part Details for FLL21E180IU

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FLL21E180IU Part Data Attributes:

FLL21E180IU FUJITSU Limited
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FLL21E180IU FUJITSU Limited RF Power Field-Effect Transistor, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, IU, 4 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer FUJITSU LTD
Package Description FLANGE MOUNT, R-CDFM-F4
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
DS Breakdown Voltage-Min 28 V
FET Technology JUNCTION
Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F4
Number of Terminals 4
Operating Mode DEPLETION MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for FLL21E180IU

This table gives cross-reference parts and alternative options found for FLL21E180IU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FLL21E180IU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FLL21E180IU L BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC, IU, 4 PIN FUJITSU Semiconductor Limited FLL21E180IU vs FLL21E180IU
FLL21E180IU RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, IU, 4 PIN SUMITOMO ELECTRIC Industries Ltd FLL21E180IU vs FLL21E180IU
Part Number Description Manufacturer Compare
FLL21E180IU L BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC, IU, 4 PIN FUJITSU Semiconductor Limited FLL21E180IU vs FLL21E180IU
FLL21E180IU RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, IU, 4 PIN SUMITOMO ELECTRIC Industries Ltd FLL21E180IU vs FLL21E180IU

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