FLC307XP
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, DIE-10

Overview of FLC307XP by FUJITSU Limited

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  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

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Part Data Attributes for FLC307XP by FUJITSU Limited

FLC307XP
FUJITSU Limited
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
FUJITSU LTD
Package Description
UNCASED CHIP, R-XUUC-N10
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.40
Additional Feature
HIGH RELIABILITY
Configuration
SINGLE
DS Breakdown Voltage-Min
15 V
FET Technology
JUNCTION
Highest Frequency Band
C BAND
JESD-30 Code
R-XUUC-N10
Number of Elements
1
Number of Terminals
10
Operating Mode
DEPLETION MODE
Operating Temperature-Max
175 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
15 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
NO LEAD
Terminal Position
UPPER
Transistor Element Material
GALLIUM ARSENIDE
Want to compare parts?
  1. FLC307XP
    FUJITSU Limited
    RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, DIE-10
    VS

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