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FLC107WG by:

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE WG, 4 PIN

Part Details for FLC107WG by FUJITSU Limited

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Applications Education and Research Industrial Automation Electronic Manufacturing

Part Details for FLC107WG

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FLC107WG Part Data Attributes:

FLC107WG FUJITSU Limited
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FLC107WG FUJITSU Limited RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE WG, 4 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer FUJITSU LTD
Package Description HERMETIC SEALED, METAL CERAMIC, CASE WG, 4 PIN
Pin Count 2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 15 V
FET Technology JUNCTION
Highest Frequency Band C BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Operating Temperature-Max 175 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 7.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Element Material GALLIUM ARSENIDE

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