Part Details for FK7VS-12 by Renesas Electronics Corporation
Overview of FK7VS-12 by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FK7VS-12
FK7VS-12 CAD Models
FK7VS-12 Part Data Attributes
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FK7VS-12
Renesas Electronics Corporation
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Datasheet
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FK7VS-12
Renesas Electronics Corporation
7A, 600V, 1.63ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220S, 3 PIN
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| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | TO-220S | |
| Package Description | TO-220S, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 1996-07-01 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 1.63 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 21 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FK7VS-12
This table gives cross-reference parts and alternative options found for FK7VS-12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FK7VS-12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQB7N60TM | Power MOSFET, N-Channel, QFET®, 600 V, 7.4 A, 1 Ω, D2PAK, 800-REEL | onsemi | FK7VS-12 vs FQB7N60TM |
| FQB10N60C | Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Fairchild Semiconductor Corporation | FK7VS-12 vs FQB10N60C |
| FQB6N60TM | 6.2A, 600V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | Rochester Electronics LLC | FK7VS-12 vs FQB6N60TM |
| NTB10N60 | 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | Rochester Electronics LLC | FK7VS-12 vs NTB10N60 |
| FQB4N60TM | Power Field-Effect Transistor, 4.4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | FK7VS-12 vs FQB4N60TM |
| FQB3N60 | Power Field-Effect Transistor, 3A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | FK7VS-12 vs FQB3N60 |
| FQB7N60TM_WS | N-Channel QFET® MOSFET 600V, 7.4A, 1Ω, TO-263 2L (D2PAK), 6400-TAPE REEL | onsemi | FK7VS-12 vs FQB7N60TM_WS |
| IRFBC40S | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | International Rectifier | FK7VS-12 vs IRFBC40S |
| 2SK3889-01S | Power Field-Effect Transistor, 9A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fuji Electric Co Ltd | FK7VS-12 vs 2SK3889-01S |
| FQB3N60TM | Power Field-Effect Transistor, 3A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | FK7VS-12 vs FQB3N60TM |