Datasheets
FK10SM-10 by:

Power Field-Effect Transistor, 10A I(D), 500V, 1.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for FK10SM-10 by Mitsubishi Electric

Overview of FK10SM-10 by Mitsubishi Electric

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Applications Education and Research Aerospace and Defense Agriculture Technology Robotics and Drones

Part Details for FK10SM-10

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FK10SM-10 Part Data Attributes:

FK10SM-10 Mitsubishi Electric
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FK10SM-10 Mitsubishi Electric Power Field-Effect Transistor, 10A I(D), 500V, 1.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Transferred
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 1.13 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FK10SM-10

This table gives cross-reference parts and alternative options found for FK10SM-10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FK10SM-10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FK10SM-10 10A, 500V, 1.13ohm, N-CHANNEL, Si, POWER, MOSFET, SC-65, TO-3P, 3 PIN Renesas Electronics Corporation FK10SM-10 vs FK10SM-10
FK10SM-10 Power Field-Effect Transistor, 10A I(D), 500V, 1.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Powerex Power Semiconductors FK10SM-10 vs FK10SM-10
Part Number Description Manufacturer Compare
FK10SM-10 10A, 500V, 1.13ohm, N-CHANNEL, Si, POWER, MOSFET, SC-65, TO-3P, 3 PIN Renesas Electronics Corporation FK10SM-10 vs FK10SM-10
2SK1278 Power Field-Effect Transistor, 10A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Fuji Electric Co Ltd FK10SM-10 vs 2SK1278
FK10SM-10 Power Field-Effect Transistor, 10A I(D), 500V, 1.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Powerex Power Semiconductors FK10SM-10 vs FK10SM-10

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