Part Details for FHX35X by SUMITOMO ELECTRIC Device Innovations Inc
Overview of FHX35X by SUMITOMO ELECTRIC Device Innovations Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for FHX35X
FHX35X CAD Models
FHX35X Part Data Attributes
|
FHX35X
SUMITOMO ELECTRIC Device Innovations Inc
Buy Now
Datasheet
|
Compare Parts:
FHX35X
SUMITOMO ELECTRIC Device Innovations Inc
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | EUDYNA DEVICES INC | |
Part Package Code | DIE | |
Package Description | DIE | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | LOW NOISE, HIGH RELIABILITY | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 4 V | |
FET Technology | HIGH ELECTRON MOBILITY | |
Highest Frequency Band | KU BAND | |
JESD-30 Code | R-XUUC-N | |
Number of Elements | 1 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | UNCASED CHIP | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Gain-Min (Gp) | 8.5 dB | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |