Datasheets
FHX35X by:

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-4

Part Details for FHX35X by FUJITSU Limited

Overview of FHX35X by FUJITSU Limited

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Price & Stock for FHX35X

Part # Distributor Description Stock Price Buy
Bristol Electronics   151
RFQ
Quest Components RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, KU BAND, GALLIUM ARSENIDE, N-CHANNEL, HIGH ELECTRON MOBILITY FET 120
  • 1 $16.4250
  • 18 $13.5050
  • 75 $12.7750
$12.7750 / $16.4250 Buy Now
ES Components FUJITSU FHX35X / 002 BARE DIE 1 in Stock
RFQ

Part Details for FHX35X

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FHX35X Part Data Attributes

FHX35X FUJITSU Limited
Buy Now Datasheet
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FHX35X FUJITSU Limited RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-4
Part Life Cycle Code Obsolete
Ihs Manufacturer FUJITSU LTD
Package Description DIE-4
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.40
Samacsys Manufacturer FUJITSU
Additional Feature HIGH RELIABILITY, LOW NOISE
Configuration SINGLE
DS Breakdown Voltage-Min 4 V
FET Technology HIGH ELECTRON MOBILITY
Highest Frequency Band KU BAND
JESD-30 Code R-XUUC-N4
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.29 W
Power Gain-Min (Gp) 8.5 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position UPPER
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for FHX35X

This table gives cross-reference parts and alternative options found for FHX35X. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FHX35X, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FHX05X RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE FUJITSU Limited FHX35X vs FHX05X
NE76100M RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-5 NEC Electronics America Inc FHX35X vs NE76100M
NE38018 RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, NEC Electronics America Inc FHX35X vs NE38018
NE32500 RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Hetero-junction FET, DIE-4 NEC Electronics America Inc FHX35X vs NE32500
NE38018T2-A S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET Renesas Electronics Corporation FHX35X vs NE38018T2-A
NE76000 RF Small Signal Field-Effect Transistor, 2-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-6 NEC Electronics America Inc FHX35X vs NE76000
NE33200M RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, DIE-4 California Eastern Laboratories (CEL) FHX35X vs NE33200M
NE32400 RF Small Signal Field-Effect Transistor, KA Band, Silicon, N-Channel, Hetero-junction FET, DIE-6 NEC Electronics Group FHX35X vs NE32400
NE33200N RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET NEC Electronics Group FHX35X vs NE33200N
NE76100P RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET California Eastern Laboratories (CEL) FHX35X vs NE76100P

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