Part Details for FHX35X by FUJITSU Limited
Overview of FHX35X by FUJITSU Limited
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FHX35X
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 151 |
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RFQ | ||
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Quest Components | RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, KU BAND, GALLIUM ARSENIDE, N-CHANNEL, HIGH ELECTRON MOBILITY FET | 120 |
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$12.7750 / $16.4250 | Buy Now |
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ES Components | FUJITSU FHX35X / 002 BARE DIE | 1 in Stock |
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RFQ |
Part Details for FHX35X
FHX35X CAD Models
FHX35X Part Data Attributes
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FHX35X
FUJITSU Limited
Buy Now
Datasheet
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Compare Parts:
FHX35X
FUJITSU Limited
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-4
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FUJITSU LTD | |
Package Description | DIE-4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.40 | |
Samacsys Manufacturer | FUJITSU | |
Additional Feature | HIGH RELIABILITY, LOW NOISE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 4 V | |
FET Technology | HIGH ELECTRON MOBILITY | |
Highest Frequency Band | KU BAND | |
JESD-30 Code | R-XUUC-N4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | UNCASED CHIP | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.29 W | |
Power Gain-Min (Gp) | 8.5 dB | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | UPPER | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for FHX35X
This table gives cross-reference parts and alternative options found for FHX35X. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FHX35X, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FHX05X | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE | FUJITSU Limited | FHX35X vs FHX05X |
NE76100M | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-5 | NEC Electronics America Inc | FHX35X vs NE76100M |
NE38018 | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, | NEC Electronics America Inc | FHX35X vs NE38018 |
NE32500 | RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Hetero-junction FET, DIE-4 | NEC Electronics America Inc | FHX35X vs NE32500 |
NE38018T2-A | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET | Renesas Electronics Corporation | FHX35X vs NE38018T2-A |
NE76000 | RF Small Signal Field-Effect Transistor, 2-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-6 | NEC Electronics America Inc | FHX35X vs NE76000 |
NE33200M | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, DIE-4 | California Eastern Laboratories (CEL) | FHX35X vs NE33200M |
NE32400 | RF Small Signal Field-Effect Transistor, KA Band, Silicon, N-Channel, Hetero-junction FET, DIE-6 | NEC Electronics Group | FHX35X vs NE32400 |
NE33200N | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET | NEC Electronics Group | FHX35X vs NE33200N |
NE76100P | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | California Eastern Laboratories (CEL) | FHX35X vs NE76100P |