Datasheets
FHX35LP by:

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

Part Details for FHX35LP by FUJITSU Limited

Overview of FHX35LP by FUJITSU Limited

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Part Details for FHX35LP

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FHX35LP Part Data Attributes:

FHX35LP FUJITSU Limited
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FHX35LP FUJITSU Limited RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4
Part Life Cycle Code Obsolete
Ihs Manufacturer FUJITSU LTD
Package Description HERMETIC SEALED, METAL CERAMIC PACKAGE-4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Additional Feature LOW NOISE, HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 4 V
FET Technology HIGH ELECTRON MOBILITY
Highest Frequency Band KU BAND
JESD-30 Code O-CRDB-F4
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style DISK BUTTON
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.29 W
Power Gain-Min (Gp) 8.5 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position RADIAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for FHX35LP

This table gives cross-reference parts and alternative options found for FHX35LP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FHX35LP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NE76184A RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, NEC Electronics America Inc FHX35LP vs NE76184A
FHX35LP KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4 FUJITSU Semiconductor Limited FHX35LP vs FHX35LP
NE76184A RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET California Eastern Laboratories (CEL) FHX35LP vs NE76184A

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