Datasheets
FHX35LG/002 by:

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4

Part Details for FHX35LG/002 by FUJITSU Semiconductor Limited

Overview of FHX35LG/002 by FUJITSU Semiconductor Limited

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Part Details for FHX35LG/002

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FHX35LG/002 Part Data Attributes

FHX35LG/002 FUJITSU Semiconductor Limited
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FHX35LG/002 FUJITSU Semiconductor Limited RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4
Part Life Cycle Code Obsolete
Ihs Manufacturer FUJITSU SEMICONDUCTOR AMERICA INC
Package Description DISK BUTTON, O-CRDB-F4
Pin Count 4
Manufacturer Package Code CASE LG
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW NOISE
Configuration SINGLE
DS Breakdown Voltage-Min 6 V
FET Technology HIGH ELECTRON MOBILITY
JESD-30 Code O-CRDB-F4
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style DISK BUTTON
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position RADIAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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