Part Details for FHX35LG/002 by FUJITSU Limited
Overview of FHX35LG/002 by FUJITSU Limited
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Part Details for FHX35LG/002
FHX35LG/002 CAD Models
FHX35LG/002 Part Data Attributes
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FHX35LG/002
FUJITSU Limited
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Datasheet
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FHX35LG/002
FUJITSU Limited
RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, METAL CERAMIC, CASE LG, 4 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FUJITSU LTD | |
Package Description | DISK BUTTON, X-CXDB-F4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Additional Feature | LOW NOISE | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 6 V | |
FET Technology | HIGH ELECTRON MOBILITY | |
JESD-30 Code | X-CXDB-F4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | UNSPECIFIED | |
Package Style | DISK BUTTON | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.29 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | UNSPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for FHX35LG/002
This table gives cross-reference parts and alternative options found for FHX35LG/002. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FHX35LG/002, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FHX35LG/002 | RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4 | FUJITSU Semiconductor Limited | FHX35LG/002 vs FHX35LG/002 |