Datasheets
FGPF4565 by:

IGBT, 650 V Field Stop Trench, 1000-TUBE

Part Details for FGPF4565 by onsemi

Overview of FGPF4565 by onsemi

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Applications Automotive

Price & Stock for FGPF4565

Part # Distributor Description Stock Price Buy
DISTI # 73AK1052
Newark Igbt, 650 V Field Stop Trench |Onsemi FGPF4565 Min Qty: 310 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $1.6500
  • 500 $1.5400
  • 1,000 $1.4400
$1.4400 / $1.6500 Buy Now
DISTI # FGPF4565
Avnet Americas Trans IGBT Chip N-CH 650V 170A 3-Pin TO-220F Tube - Rail/Tube (Alt: FGPF4565) RoHS: Compliant Min Qty: 695 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube 2000 Partner Stock
  • 695 $1.0656
  • 700 $1.0368
  • 1,400 $1.0080
  • 3,500 $0.9792
  • 7,000 $0.9504
  • 35,000 $0.9216
  • 70,000 $0.8928
$0.8928 / $1.0656 Buy Now
Rochester Electronics Insulated Gate Bipolar Transistor RoHS: Compliant Status: Obsolete Min Qty: 1 3000
  • 1 $1.2100
  • 25 $1.1900
  • 100 $1.1400
  • 500 $1.0900
  • 1,000 $1.0300
$1.0300 / $1.2100 Buy Now
Chip1Cloud IGBT 650V 30W TO-220F 8300
RFQ
Flip Electronics Stock, ship today 2000
  • 1 $0.7200
$0.7200 RFQ

Part Details for FGPF4565

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FGPF4565 Part Data Attributes

FGPF4565 onsemi
Buy Now Datasheet
Compare Parts:
FGPF4565 onsemi IGBT, 650 V Field Stop Trench, 1000-TUBE
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description TO-220F, 3 PIN
Manufacturer Package Code 221AT
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Case Connection ISOLATED
Collector Current-Max (IC) 30 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 5 V
Gate-Emitter Voltage-Max 25 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 30 W
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 242.8 ns
Turn-on Time-Nom (ton) 72 ns
VCEsat-Max 1.88 V

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